Electrical Properties of Indium Arsenide Nanowires and their Field-Effect Transistors; Fu,Mengqi.
Material type: TextPublication details: Singapore: Springer; 2016.Description: v,102pISBN:- 9789811334436
- 621.381
Item type | Current library | Home library | Call number | Status | Date due | Barcode | |
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Book | Dept. of Nanoscience and Nanotechnology General Stacks | Dept. of Nanoscience and Nanotechnology | 621.381 FU/E (Browse shelf(Opens below)) | Available | NAN1551 |
Browsing Dept. of Nanoscience and Nanotechnology shelves, Shelving location: General Stacks Close shelf browser (Hides shelf browser)
621.381 DAT/Q Quantum transport : atom to transistor | 621.381 FAC/T Ultrafast Photonics : from synthesis to applications / | 621.381 FAC/T Ultrafast Photonics : from synthesis to applications / | 621.381 FU/E Electrical Properties of Indium Arsenide Nanowires and their Field-Effect Transistors; | 621.381 GAY/O Op-AMPS And Linear Integrated Circuits; | 621.381 GAY/O Op-AMPS And Linear Integrated Circuits; | 621.381 GAY/O Op-AMPS And Linear Integrated Circuits; |
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